Vishay E Type N-Channel Power MOSFET, 24 A, 650 V, 3-Pin TO-263 SIHB24N65E-GE3

RS-stocknr.:: 256-7413
Fabrikantnummer:: SIHB24N65E-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 24 A, 650 V, 3-Pin TO-263 SIHB24N65E-GE3

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RS-stocknr.:: 256-7413
Fabrikantnummer:: SIHB24N65E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.145Ω
	Typical Gate Charge Qg @ Vgs	122nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	250W
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.145Ω
	Typical Gate Charge Qg @ Vgs 122nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 250W
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHB24N65E-GE3

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 24A Maximum Continuous Drain Current - SIHB24N65E-GE3

This power MOSFET is a high-voltage N-channel transistor designed for switching and power-management roles in electronic and industrial systems. It operates across a broad temperature range and is supplied in a surface-mount TO-263 package suitable for integration onto populated assemblies where elevated voltage handling is required.

Features and Benefits:

• 650V maximum drain-source voltage enabling high-voltage switching
• 24A continuous drain current supporting substantial load handling
• 0.145Ω Rds(on) reducing conduction losses in power paths
• 250W power dissipation allowing sustained thermal load
• 122nC typical gate charge for predictable gate-drive requirements
• 30V gate-source rating providing wide gate-drive margin

Applications

• Suitable for SMPS primary-side switching in high-voltage supplies
• Ideal for industrial motor drive front-end switches
• Used for high-voltage DC-DC conversion in automation systems
• Can be used for power-stage switches in welding or heating controllers

What thermal limits should I consider for heavy-duty operation?

The device is rated to operate up to +150°C junction temperature and down to -55°C, so thermal management such as appropriate heatsinking or PCB copper area is required to maintain safe junction temperatures at high power dissipation.

How does the gate charge affect drive circuitry selection?

With a typical gate charge of 122nC at the specified gate voltage, drive circuits must source and sink sufficient current to achieve the required switching speed while considering switching losses and driver power capability.

What mounting considerations are needed for assembly reliability?

It is provided in a TO-263 surface-mount package with three pins, so standard reflow soldering processes and correct pad design should be used to ensure mechanical and thermal connection.

Which environmental or regulatory attribute is included?

The component conforms to RoHS requirements, indicating it meets the specified restrictions on hazardous substances.