Vishay SIHH Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3
- RS-stocknr.:
- 268-8300
- Fabrikantnummer:
- SIHH085N60EF-T1GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 11.544,00
(excl. BTW)
€ 13.968,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 3,848 | € 11.544,00 |
*prijsindicatie
- RS-stocknr.:
- 268-8300
- Fabrikantnummer:
- SIHH085N60EF-T1GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 8 x 8 | |
| Series | SIHH | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.085Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 184W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 8 x 8 | ||
Series SIHH | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.085Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 184W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 8mm | ||
Automotive Standard No | ||
- Land van herkomst:
- TW
Vishay SIHH Series MOSFET, 650V Drain Source Voltage, 30A Drain Current - SIHH085N60EF-T1GE3
This n-channel MOSFET is a high-voltage switching device designed for use in power conversion and control systems within industrial and automation environments. It operates across a wide temperature range and is intended for surface-mounted assemblies where robust high-voltage handling and efficient switching are required.
Features and Benefits:
• 650V drain rating enabling high-voltage switching capability • 30A continuous drain current supporting sustained load operation • 0.085Ω Rds(on) reducing conduction losses in power paths • 63nC typical gate charge allowing predictable switching performance • 184W power dissipation for high thermal load handling • 150°C maximum junction temperature for elevated temperature use
Applications
• Suitable for industrial motor drive inverters requiring high-voltage devices • Used for power supplies in automation equipment with high switching demands • Ideal for switch-mode converters handling significant power dissipation • Can be used for high-voltage relay replacement in electrical control panels
What mounting style does it require on a board?
It is supplied in a PowerPAK 8x8 surface-mount package requiring compatible solder land patterns for thermal and electrical connection.
How does the gate voltage limit affect control circuitry?
The gate must be driven within ±30V to prevent gate dielectric stress, so gate drivers should provide appropriate voltage margins and protection.
What thermal conditions should be considered during design?
With a 184W dissipation rating and 150°C maximum operating temperature, thermal management such as heat spreading and adequate PCB copper is necessary to maintain safe junction temperatures.
What pin configuration complexity should designers expect?
The device has four pins, which require correct assignment in layout to ensure low-inductance connections for drain, source and gate functions.
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