Infineon OptiMOS Type N-Channel MOSFET, 4.7 A, 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R1K0PFD7SAUMA1
- RS-stocknr.:
- 273-3009
- Fabrikantnummer:
- IPD60R1K0PFD7SAUMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2500 eenheden)*
€ 675,00
(excl. BTW)
€ 825,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 04 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,27 | € 675,00 |
*prijsindicatie
- RS-stocknr.:
- 273-3009
- Fabrikantnummer:
- IPD60R1K0PFD7SAUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-TO252-3 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 26W | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-TO252-3 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 26W | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 600V cool MOS PFD7 super junction MOSFET complements the cool MOS 7 offering for consumer applications. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD pac
BOM cost reduction and easy manufacturing
Robustness and reliability
Easy to select the right parts for design fine-tuning
Gerelateerde Links
- Infineon N-Channel MOSFET 650 V, 3-Pin DPAK IPD65R660CFDAATMA1
- Infineon N-Channel MOSFET 650 V, 3-Pin DPAK IPD65R225C7ATMA1
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin DPAK SPD08P06PGBTMA1
- Infineon MOSFET IPD60R1K0PFD7SAUMA1
- Infineon CoolMOS™ C6 N-Channel MOSFET 650 V, 3-Pin DPAK IPD60R380C6ATMA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin DPAK IPD60R280P7ATMA1
- Infineon CoolMOS™ CE N-Channel MOSFET 650 V, 3-Pin DPAK IPD65R1K0CEAUMA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1