Infineon SPD18P06P G Type P-Channel MOSFET, -18.6 A, 60 V Enhancement, 3-Pin PG-TO252-3
- RS-stocknr.:
- 273-2832
- Fabrikantnummer:
- SPD18P06PGBTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,06
(excl. BTW)
€ 7,335
(incl. BTW)
Voeg 70 eenheden toe voor gratis bezorging
Op voorraad
- 45 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,212 | € 6,06 |
| 50 - 95 | € 1,082 | € 5,41 |
| 100 - 245 | € 0,84 | € 4,20 |
| 250 + | € 0,824 | € 4,12 |
*prijsindicatie
- RS-stocknr.:
- 273-2832
- Fabrikantnummer:
- SPD18P06PGBTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -18.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TO252-3 | |
| Series | SPD18P06P G | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 80W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.33V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 68-1, RoHS, AEC Q101 | |
| Height | 1.5mm | |
| Width | 40 mm | |
| Length | 40mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -18.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TO252-3 | ||
Series SPD18P06P G | ||
Mount Type Surface | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 80W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.33V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 68-1, RoHS, AEC Q101 | ||
Height 1.5mm | ||
Width 40 mm | ||
Length 40mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a P channel, enhancement mode MOSFET. It has 175 degree Celsius operating temperature. This MOSFET is qualified according to AEC Q101 standard.
RoHS compliant
Avalanche rated
Pb free lead plating
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