Vishay EF N-Channel Power MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-263 SIHB155N60EF-GE3

RS-stocknr.:: 653-175
Fabrikantnummer:: SIHB155N60EF-GE3
Fabrikant:: Vishay

Vishay EF N-Channel Power MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-263 SIHB155N60EF-GE3

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Subtotaal (50 eenheden, in een tube van 50)*

€ 125,40

(excl. BTW)

€ 151,75

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Laatste 1.000 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per tube*
50 - 200	€ 2,508	€ 125,40
250 +	€ 2,458	€ 122,90

*prijsindicatie

RS-stocknr.:: 653-175
Fabrikantnummer:: SIHB155N60EF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	EF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.159Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	25nC
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	179W
	Maximum Operating Temperature	150°C
	Width	9.65mm
	Standards/Approvals	RoHS
	Length	2.79mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series EF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.159Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 25nC
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 179W
	Maximum Operating Temperature 150°C
	Width 9.65mm
	Standards/Approvals RoHS
	Length 2.79mm
	Automotive Standard No

Datasheet - SIHB155N60EF-GE3

Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 21A Continuous Drain Current - SIHB155N60EF-GE3

This power MOSFET is a high-voltage N‑channel transistor designed for switching and power-conversion roles in demanding electronic systems. It operates across a wide ambient range and is supplied in a through-hole TO‑263 package for robust mounting and thermal management. The device suits designers who need a compact, high-voltage switch with modest gate-charge characteristics for efficient gate drive.

Features and Benefits:

• 600V drain-source rating enables high-voltage switching
• 21A continuous current supports substantial load currents
• 0.159Ω Rds(on) reduces conduction losses during operation
• 25nC typical gate charge minimises driver energy required
• 179W maximum power dissipation allows elevated thermal throughput
• 30V gate-source limit permits standard gate-drive voltages

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive switching stages
• Used with SMPS topologies requiring through-hole mounting
• Can be used for high-voltage relay and contactor drivers
• Appropriate for power-conditioning equipment in harsh environments

What thermal range can this transistor tolerate during operation?

It is rated to function from -55°C up to 150°C, accommodating extreme ambient and elevated junction conditions.

How does the package choice affect mounting and cooling options?

The TO‑263 through-hole format provides a solid mechanical connection and a larger thermal pad area for soldering to heatsinks or boards for improved dissipation.

What diode behaviour can be expected in conduction?

The intrinsic diode exhibits a forward drop of approximately 1.2V when conducting, relevant for freewheeling and reverse-current scenarios.

Is this suitable for automotive-qualified applications?

The device is not specified to automotive standards, so it should not be selected where formal automotive qualification is required.