Vishay SiR Type P-Channel MOSFET, 37.1 A, 60 V Enhancement, 8-Pin SO-8 SIR5623DP-T1-RE3

Subtotal (1 reel of 3000 units)*

€ 2.169,00

(exc. VAT)

€ 2.625,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +€ 0,723€ 2.169,00

*price indicative

RS Stock No.:
279-9952
Mfr. Part No.:
SIR5623DP-T1-RE3
Brand:
Vishay
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Merk

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

37.1A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.024Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

59.5W

Typical Gate Charge Qg @ Vgs

33nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5.15mm

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

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