Vishay SIRS Type N-Channel MOSFET, 478 A, 30 V Enhancement, 8-Pin SO-8 SIRS4302DP-T1-GE3

RS-stocknr.:: 279-9963
Fabrikantnummer:: SIRS4302DP-T1-GE3
Fabrikant:: Vishay

Vishay SIRS Type N-Channel MOSFET, 478 A, 30 V Enhancement, 8-Pin SO-8 SIRS4302DP-T1-GE3

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1000 +	€ 2,585	€ 5,17

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RS-stocknr.:: 279-9963
Fabrikantnummer:: SIRS4302DP-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	478A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SO-8
	Series	SIRS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.00057Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	208W
	Typical Gate Charge Qg @ Vgs	230nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	5mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 478A
	Maximum Drain Source Voltage Vds 30V
	Package Type SO-8
	Series SIRS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.00057Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 208W
	Typical Gate Charge Qg @ Vgs 230nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 5mm
	Automotive Standard No

Datasheet - SIRS4302DP-T1-GE3

Vishay SIRS Series MOSFET, 30V Maximum Drain Source Voltage, 478A Maximum Continuous Drain Current - SIRS4302DP-T1-GE3

This MOSFET is a surface-mount N-channel device designed for high-current power switching in industrial electronics. It operates as an enhancement-mode transistor for controlled conduction in DC power stages and converter topologies, offering elevated temperature tolerance for demanding operating conditions.

Features and Benefits:

• 478A continuous drain current for high-load applications • 0.00057Ω low Rds(on) to minimise conduction losses • 30V drain-source rating for low-voltage power systems • 230nC typical gate charge for predictable switching behaviour • 208W power dissipation to handle substantial thermal loads • 150°C maximum junction temperature for elevated-temperature use

Applications

• Suitable for DC-DC converters in power distribution units • Ideal for motor drive stages in industrial automation • Used for high-current synchronous rectification in PSU designs • Suitable for power switching in battery management systems • Can be used for load switching in server and telecoms power racks

What mounting style does it require and how many pins are present?

It is supplied in an SO-8 surface-mount package with an 8-pin configuration for PCB assembly.

What ambient temperature range can it operate in reliably?

The device supports operation from -55°C up to its specified maximum junction temperature of 150°C.

What gate voltage limits should designers observe?

Gate-source voltage must not exceed ±20V to avoid gate oxide stress.

Is this device compliant with environmental restrictions on hazardous substances?

The component conforms to RoHS requirements for restricted materials.