Infineon SIPMOS® P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK SPD04P10PLGBTMA1

RS-stocknr.:: 826-9064
Fabrikantnummer:: SPD04P10PLGBTMA1
Fabrikant:: Infineon

Infineon SIPMOS® P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK SPD04P10PLGBTMA1

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 50 eenheden)*

€ 34,30

(excl. BTW)

€ 41,50

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per verpakking*
50 - 200	€ 0,686	€ 34,30
250 - 950	€ 0,448	€ 22,40
1000 - 2450	€ 0,35	€ 17,50
2500 +	€ 0,294	€ 14,70

*prijsindicatie

RS-stocknr.:: 826-9064
Fabrikantnummer:: SPD04P10PLGBTMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	4.2 A
	Maximum Drain Source Voltage	100 V
	Package Type	DPAK (TO-252)
	Series	SIPMOS®
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	1.05 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	38 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	12 nC @ 10 V
	Number of Elements per Chip	1
	Length	6.73mm
	Maximum Operating Temperature	+175 °C
	Width	6.22mm
	Transistor Material	Si
	Height	2.41mm
	Minimum Operating Temperature	-55 °C

	Alles selecteren
	Merk Infineon
	Channel Type P
	Maximum Continuous Drain Current 4.2 A
	Maximum Drain Source Voltage 100 V
	Package Type DPAK (TO-252)
	Series SIPMOS®
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 1.05 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 38 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 12 nC @ 10 V
	Number of Elements per Chip 1
	Length 6.73mm
	Maximum Operating Temperature +175 °C
	Width 6.22mm
	Transistor Material Si
	Height 2.41mm
	Minimum Operating Temperature -55 °C

N.v.t.

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon SIPMOS® P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK SPD04P10PLGBTMA1

Infineon SIPMOS® P-Channel MOSFETs

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