Infineon SPD04P10PL G Type P-Channel MOSFET, -4.2 A, 100 V Enhancement, 3-Pin PG-TO252-3
- RS-stocknr.:
- 273-7551
- Fabrikantnummer:
- SPD04P10PLGBTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 6,08
(excl. BTW)
€ 7,36
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Wordt opgeheven
- Laatste 2.240 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,608 | € 6,08 |
| 50 - 90 | € 0,596 | € 5,96 |
| 100 - 240 | € 0,558 | € 5,58 |
| 250 - 990 | € 0,514 | € 5,14 |
| 1000 + | € 0,505 | € 5,05 |
*prijsindicatie
- RS-stocknr.:
- 273-7551
- Fabrikantnummer:
- SPD04P10PLGBTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -4.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SPD04P10PL G | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.94V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Operating Temperature | 175°C | |
| Length | 40mm | |
| Height | 1.5mm | |
| Standards/Approvals | AEC Q101, RoHS | |
| Width | 40mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -4.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SPD04P10PL G | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.94V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Operating Temperature 175°C | ||
Length 40mm | ||
Height 1.5mm | ||
Standards/Approvals AEC Q101, RoHS | ||
Width 40mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a qualified according to AEC Q101.
Logic level
RoHS compliant
Enhancement mode
Pb free lead plating
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