Infineon SIPMOS® P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 SPP15P10PHXKSA1

RS-stocknr.:: 914-0191
Fabrikantnummer:: SPP15P10PHXKSA1
Fabrikant:: Infineon

Infineon SIPMOS® P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 SPP15P10PHXKSA1

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 10 eenheden)*

€ 12,45

(excl. BTW)

€ 15,06

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per verpakking*
10 - 90	€ 1,245	€ 12,45
100 - 490	€ 0,707	€ 7,07
500 - 990	€ 0,689	€ 6,89
1000 - 2490	€ 0,672	€ 6,72
2500 +	€ 0,656	€ 6,56

*prijsindicatie

RS-stocknr.:: 914-0191
Fabrikantnummer:: SPP15P10PHXKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	15 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220
	Series	SIPMOS®
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	240 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	128 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Length	10.36mm
	Typical Gate Charge @ Vgs	37 nC @ 10 V
	Transistor Material	Si
	Width	4.57mm
	Minimum Operating Temperature	-55 °C
	Height	15.95mm
	Forward Diode Voltage	1.35V

	Alles selecteren
	Merk Infineon
	Channel Type P
	Maximum Continuous Drain Current 15 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220
	Series SIPMOS®
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 240 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 128 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Length 10.36mm
	Typical Gate Charge @ Vgs 37 nC @ 10 V
	Transistor Material Si
	Width 4.57mm
	Minimum Operating Temperature -55 °C
	Height 15.95mm
	Forward Diode Voltage 1.35V

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon SIPMOS® P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 SPP15P10PHXKSA1

Infineon SIPMOS® P-Channel MOSFETs

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