Infineon SIPMOS® P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 SPP15P10PHXKSA1

Merk

Infineon

Channel Type

P

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

100 V

Series

SIPMOS®

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

128 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.36mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

37 nC @ 10 V

Width

4.57mm

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

15.95mm

Forward Diode Voltage

1.35V