ROHM RV4 Type P-Channel Single MOSFETs, -20 V Enhancement, 8-Pin DFN1616-6W RV4C060ZPHZGTCR1
- RS-stocknr.:
- 646-539
- Fabrikantnummer:
- RV4C060ZPHZGTCR1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 3,39
(excl. BTW)
€ 4,10
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 100 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,339 | € 3,39 |
| 100 - 240 | € 0,298 | € 2,98 |
| 250 - 990 | € 0,269 | € 2,69 |
| 1000 - 4990 | € 0,217 | € 2,17 |
| 5000 + | € 0,211 | € 2,11 |
*prijsindicatie
- RS-stocknr.:
- 646-539
- Fabrikantnummer:
- RV4C060ZPHZGTCR1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | DFN1616-6W | |
| Series | RV4 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.5W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | RoHS | |
| Length | 1.7mm | |
| Width | 1.70 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type DFN1616-6W | ||
Series RV4 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.5W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals RoHS | ||
Length 1.7mm | ||
Width 1.70 mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel 20 volt 6 ampere small signal metal oxide semiconductor field effect transistor is one hundred percent unclamped inductive switching tested with wet table flank for automated optical inspection and one hundred thirty micrometer electrode part guarantee.
Low on resistance
Small high power package
Low voltage drive(1.5V)
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