ROHM RD3G04BBJHRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) RD3G04BBJHRBTL

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Verpakkingsopties
RS-stocknr.:
687-383
Fabrikantnummer:
RD3G04BBJHRBTL
Fabrikant:
ROHM
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Merk

ROHM

Product Type

Single MOSFETs

Channel Type

Type P

Maximum Drain Source Voltage Vds

-40V

Package Type

TO-252 (TL)

Series

RD3G04BBJHRB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

24.0mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

5 V

Typical Gate Charge Qg @ Vgs

27.6nC

Maximum Power Dissipation Pd

53W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

6.8 mm

Height

2.3mm

Length

10.50mm

Standards/Approvals

RoHS, AEC-Q101

Automotive Standard

AEC-Q101

The ROHM Power MOSFET delivers exceptional performance, designed specifically for high-efficiency applications. This component effectively manages power with a maximum Drain-Source voltage of -40V and continuous current handling of ±40A, making it ideal for managing electrical loads in various systems. Its low on-resistance of 24.0mΩ ensures minimal energy loss, promoting efficiency, while robust thermal characteristics allow it to operate reliably up to 175°C junction temperature. This product is not only AEC-Q101 qualified but also 100% avalanche tested, ensuring dependable functionality in critical environments. It is the perfect choice for applications in automotive systems, lighting, and industrial controls.

Low on resistance design for reduced energy loss

Outstanding thermal resistance enhances reliability in high-temperature environments

AEC Q101 qualification ensures quality and performance in automotive applications

100% avalanche testing reinforces component reliability under extreme conditions

Embossed packaging facilitates easy handling and integration into systems

Compatible with a variety of applications, including ADAS and lighting

High pulsed drain current capability of ±80A supports demanding load scenarios

Minimal gate charge enhances switching speed, improving overall efficiency

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