ROHM RD3L08BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08BBJHRBTL

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€ 4,272

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  • Verzending vanaf 23 januari 2026
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200 - 998€ 1,12€ 2,24
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Verpakkingsopties
RS-stocknr.:
687-358
Fabrikantnummer:
RD3L08BBJHRBTL
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

Type P

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252 (TL)

Series

RD3L08BBJHRB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

142W

Maximum Gate Source Voltage Vgs

5 V

Typical Gate Charge Qg @ Vgs

145nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, AEC-Q101

Width

6.8 mm

Length

10.50mm

Height

2.3mm

Automotive Standard

AEC-Q101

Land van herkomst:
JP
The ROHM P channel MOSFET designed for demanding applications requiring robust power management. With a maximum voltage rating of -60V and current capability of ±80A, this device is suitable for automotive and industrial use. Constructed in a TO-252 package, it ensures efficient thermal performance with a power dissipation of up to 142W. The low on-resistance of 10.7mΩ enhances power efficiency, making it an ideal choice for energy-conscious designs. Additionally, it is 100% avalanche tested and AEC-Q101 qualified, ensuring reliability in critical applications.

Optimized for efficiency with low on-state resistance, ensuring reduced power loss

Robust thermal performance allows operation in demanding environments with a maximum junction temperature of 175°C

Suitable for high-current applications with a continuous drain current capability of ±80A

AEC Q101 qualified for automotive applications, ensuring compliance with rigorous quality standards

Embossed tape packaging facilitates automated assembly processes

Fully avalanche rated, guaranteeing reliable operation under transient conditions

Pb free plating and RoHS compliant, meeting environmental standards for modern electronic components

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