ROHM RD3N045AT Type P-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-252 (TL) RD3N045ATTL1

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  • Verzending vanaf 20 januari 2026
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Verpakkingsopties
RS-stocknr.:
687-488
Fabrikantnummer:
RD3N045ATTL1
Fabrikant:
ROHM
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Merk

ROHM

Product Type

Single MOSFETs

Channel Type

Type P

Maximum Drain Source Voltage Vds

80V

Package Type

TO-252 (TL)

Series

RD3N045AT

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

650mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

5.9nC

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

17W

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101, RoHS

Height

2.3mm

Length

10.50mm

Width

6.8 mm

Automotive Standard

AEC-Q101

Land van herkomst:
JP
The ROHM P channel MOSFET designed for a variety of power applications. With a drain-source voltage rating of -80V and a continuous drain current capability of -4.5A, this MOSFET provides excellent electrical performance for demanding environments. Its low on-resistance of 650mΩ maximises efficiency while minimising heat generation, contributing to superior overall reliability. RoHS compliant and featuring a robust TO-252 package, the RD3N045AT is ideal for motor drives and other switching applications, ensuring robust operation in high-power scenarios. The device is rigorously tested for gate reliability and features are also halogen-free, supporting environmentally friendly practices.

Low on resistance of 650mΩ enhances efficiency and reduces power losses

Provides high power handling capabilities with a maximum power dissipation of 17W

Rated for a maximum junction temperature of 150°C, ensuring reliability under strenuous conditions

Pulsed drain current capacity of ±9A supports transient load applications

Gate-source voltage tolerance of ±20V allows for flexible circuit designs

Ideal for motor drive applications, enhancing performance in electric motors

RoHS compliant construction promotes environmental sustainability

Tested for 100% Rg and UIS reliability, ensuring robust long-term performance

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