ROHM AG502EED3HRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) AG502EED3HRBTL
- RS-stocknr.:
- 687-467
- Fabrikantnummer:
- AG502EED3HRBTL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 2 eenheden)*
€ 4,20
(excl. BTW)
€ 5,08
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 22 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2 - 18 | € 2,10 | € 4,20 |
| 20 - 48 | € 1,855 | € 3,71 |
| 50 - 198 | € 1,655 | € 3,31 |
| 200 - 998 | € 1,345 | € 2,69 |
| 1000 + | € 1,30 | € 2,60 |
*prijsindicatie
- RS-stocknr.:
- 687-467
- Fabrikantnummer:
- AG502EED3HRBTL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | TO-252 (TL) | |
| Series | AG502EED3HRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Power Dissipation Pd | 77W | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.80 mm | |
| Height | 2.3mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type TO-252 (TL) | ||
Series AG502EED3HRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Power Dissipation Pd 77W | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 6.80 mm | ||
Height 2.3mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- JP
The ROHM Power MOSFET designed for efficient and reliable energy management in automotive systems. Featuring a maximum drain-source voltage of -30V and continuous drain current capability of up to 78A, this device is ideal for demanding applications requiring robust power handling. Its low on-resistance of 8.5mΩ minimises power loss, contributing to enhanced thermal efficiency. Additionally, the MOSFET is qualified under AEC-Q101 standards, ensuring it meets rigorous automotive requirements for durability and performance. With excellent avalanche characteristics and a wide operational temperature range, the AG502EED3HRB ensures consistent performance under diverse conditions.
Robust construction with AEC Q101 qualification for automotive applications
Low on resistance of 8.5mΩ, optimising energy efficiency
Max continuous drain current of 78A enables handling of demanding loads
Wide operating temperature range from -55°C to 175°C for reliable performance
Thermal resistance of 1.94°C/W enhances heat dissipation capabilities
100% Avalanche tested, ensuring high reliability under transient conditions
Pb free plating and compliance with RoHS standards for environmentally-friendly design
Gerelateerde Links
- ROHM RD3E07BBJHRB P-Channel MOSFET 30 V, 3-Pin DPAK RD3E07BBJHRBTL
- ROHM P-Channel MOSFET 40 V, 8-Pin HSOP8 RS1G201ATTB1
- ROHM RD3E08BBJHRB P-Channel MOSFET 30 V, 3-Pin DPAK RD3E08BBJHRBTL
- ROHM RD3N03BAT P-Channel MOSFET 80 V, 3-Pin DPAK RD3N03BATTL1
- ROHM P-Channel MOSFET 45 V, 3-Pin DPAK RD3H160SPTL1
- ROHM P-Channel MOSFET 40 V, 3-Pin DPAK RD3G01BATTL1
- ROHM P-Channel MOSFET 60 V, 3-Pin DPAK RD3L03BATTL1
- ROHM P-Channel MOSFET 60 V, 3-Pin DPAK RD3L07BATTL1
