Vishay EF Type N-Channel Power MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-263

RS-stocknr.:: 653-176
Fabrikantnummer:: SIHB155N60EF-GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-263

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RS-stocknr.:: 653-176
Fabrikantnummer:: SIHB155N60EF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	EF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.159Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	179W
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	25nC
	Maximum Operating Temperature	150°C
	Width	9.65mm
	Length	2.79mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series EF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.159Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 179W
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 25nC
	Maximum Operating Temperature 150°C
	Width 9.65mm
	Length 2.79mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHB155N60EF-GE3

Vishay Series EF Power MOSFET, 600V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHB155N60EF-GE3

This power MOSFET is a high-voltage N-channel switching device designed for power conversion and control in industrial electronics. It operates as an enhancement-mode transistor suitable for through-hole mounting and is intended for applications requiring robust switching at elevated voltages and currents.

Features and Benefits:

• 600V drain rating enables high-voltage switching applications • 21 A continuous drain current supports substantial load handling • 0.159 Ω Rds(on) reduces conduction losses for efficient operation • 179W power dissipation allows sustained thermal load management • 25 nC typical gate charge facilitates Rapid switching transitions • 30V maximum gate tolerance permits common gate-drive voltages

Applications

• Suitable for high-voltage power supplies in automation equipment • Ideal for motor-drive stages requiring through-hole components • Used for industrial switch-mode power supplies with high dissipation • Can be used for power conversion modules in electrical systems • Suitable for prototyping and serviceable installations needing through-hole parts

What mounting considerations apply for thermal management?

The device uses a TO-263 through-hole package that benefits from a substantial heatsink or PCB copper area to dissipate up to 179W under appropriate cooling conditions.

How does gate charge influence gate-drive design?

A typical gate charge of 25 nC at rated gate drive affects switching losses and dictates driver current capability for desired rise and fall times.

What temperature range can be expected during operation?

The component is specified to operate down to -55 °C and up to 150 °C, requiring suitable thermal design to maintain junction temperatures within limits.

Are there restrictions on gate voltage during use?

Gate-source voltage must not exceed 30V to prevent gate oxide stress and ensure long-term reliability.

What electrical characteristics impact efficiency in power supplies?

The combination of low Rds(on) and the 600V drain capability reduces conduction and switching losses in high-voltage converter topologies.