ROHM RD3E07BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E07BBJHRBTL

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  • Verzending vanaf 22 januari 2026
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Verpakkingsopties
RS-stocknr.:
687-470
Fabrikantnummer:
RD3E07BBJHRBTL
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

Type P

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

-30V

Series

RD3E07BBJHRB

Package Type

TO-252 (TL)

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

77W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

5 V

Typical Gate Charge Qg @ Vgs

52nC

Maximum Operating Temperature

175°C

Length

10.50mm

Width

6.8 mm

Standards/Approvals

RoHS, AEC-Q101

Height

2.3mm

Automotive Standard

AEC-Q101

Land van herkomst:
JP
The ROHM P channel power MOSFET designed for high performance in demanding applications. With a maximum continuous drain current of ±78A and a breakdown voltage of -30V, this MOSFET is ideal for use in automotive and industrial environments requiring robust efficiency. Its compact DPAK package enables easy integration into various designs, while its low on-resistance of 8.5mΩ significantly reduces energy loss. The product is also AEC-Q101 qualified, ensuring reliability in harsh conditions, making it a perfect choice for designers seeking high-quality and durable components for their electronic applications.

Features low on resistance for improved efficiency and reduced heat generation

Offers a maximum power dissipation of 77W for high power applications

Designed to withstand a wide operating temperature range of -55 to +175°C

AEC Q101 qualified, ensuring high reliability for automotive applications

Provides 100% avalanche testing for enhanced durability under stress

Complies with Pb free and RoHS standards for environmentally friendly use

Packaged in a DPAK format for easy mounting and integration

Supports a pulsed drain current capability of ±156A for dynamic load conditions.

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