ROHM AG501EGD3HRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG501EGD3HRBTL

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€ 4,22

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Verpakkingsopties
RS-stocknr.:
687-359
Fabrikantnummer:
AG501EGD3HRBTL
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

Type P

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

-40V

Series

AG501EGD3HRB

Package Type

TO-252 (TL)

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

145nC

Maximum Power Dissipation Pd

142W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

5 V

Maximum Operating Temperature

175°C

Width

6.80 mm

Length

10.50mm

Standards/Approvals

AEC-Q101, RoHS

Height

2.3mm

Automotive Standard

AEC-Q101

The ROHM P channel power MOSFET designed for efficient energy management in automotive systems and various applications. Featuring a maximum Drain-Source voltage of -40V and a continuous drain current capability of up to -80A, this robust device delivers exceptional reliability under demanding operating conditions. With a low on-resistance of just 4.9mΩ, it ensures minimal energy loss, contributing to improved overall system efficiency and thermal performance. This MOSFET is also AEC-Q101 qualified, highlighting its suitability for automotive applications where stringent standards must be met.

Offers low on resistance for reduced power loss and enhanced efficiency

AEC Q101 qualified, ensuring reliability for automotive and critical applications

Avalanche tested to guarantee performance under dynamic conditions

Supports a maximum power dissipation of 142W, compatible with high-performance designs

Wide operating temperature range from -55°C to 175°C, allowing use in diverse environments

Pb free plating and RoHS compliant, meeting modern environmental standards

Optimised packaging specifications, including embedding options for automated assembly

Provides a guaranteed avalanche energy rating, ensuring robust operation during transient events

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