ROHM AG501EGD3HRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG501EGD3HRBTL
- RS-stocknr.:
- 687-359
- Fabrikantnummer:
- AG501EGD3HRBTL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 2 eenheden)*
€ 3,48
(excl. BTW)
€ 4,22
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 22 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2 - 18 | € 1,74 | € 3,48 |
| 20 - 48 | € 1,53 | € 3,06 |
| 50 - 198 | € 1,375 | € 2,75 |
| 200 - 998 | € 1,11 | € 2,22 |
| 1000 + | € 1,08 | € 2,16 |
*prijsindicatie
- RS-stocknr.:
- 687-359
- Fabrikantnummer:
- AG501EGD3HRBTL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 (TL) | |
| Series | AG501EGD3HRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 142W | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Width | 6.80 mm | |
| Height | 2.3mm | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 (TL) | ||
Series AG501EGD3HRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 142W | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Width 6.80 mm | ||
Height 2.3mm | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- JP
The ROHM P channel power MOSFET designed for efficient energy management in automotive systems and various applications. Featuring a maximum Drain-Source voltage of -40V and a continuous drain current capability of up to -80A, this robust device delivers exceptional reliability under demanding operating conditions. With a low on-resistance of just 4.9mΩ, it ensures minimal energy loss, contributing to improved overall system efficiency and thermal performance. This MOSFET is also AEC-Q101 qualified, highlighting its suitability for automotive applications where stringent standards must be met.
Offers low on resistance for reduced power loss and enhanced efficiency
AEC Q101 qualified, ensuring reliability for automotive and critical applications
Avalanche tested to guarantee performance under dynamic conditions
Supports a maximum power dissipation of 142W, compatible with high-performance designs
Wide operating temperature range from -55°C to 175°C, allowing use in diverse environments
Pb free plating and RoHS compliant, meeting modern environmental standards
Optimised packaging specifications, including embedding options for automated assembly
Provides a guaranteed avalanche energy rating, ensuring robust operation during transient events
Gerelateerde Links
- ROHM RD3 P-Channel MOSFET 40 V, 3-Pin DPAK RD3G08BBJHRBTL
- ROHM RD3G04BBJHRB P-Channel MOSFET 40 V, 3-Pin DPAK RD3G04BBJHRBTL
- ROHM RD3N045AT P-Channel MOSFET 80 V, 3-Pin DPAK RD3N045ATTL1
- ROHM RD3E08BBJHRB P-Channel MOSFET 30 V, 3-Pin DPAK RD3E08BBJHRBTL
- ROHM RD3P08BBLHRB P-Channel MOSFET 100 V, 3-Pin DPAK RD3P08BBLHRBTL
- ROHM RD3N03BAT P-Channel MOSFET 80 V, 3-Pin DPAK RD3N03BATTL1
- ROHM RD3L08BBJHRB P-Channel MOSFET 60 V, 3-Pin DPAK RD3L08BBJHRBTL
- ROHM P-Channel MOSFET 40 V, 3-Pin DPAK RD3G01BATTL1
