ROHM RD3E08BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E08BBJHRBTL

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  • Verzending vanaf 22 januari 2026
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200 - 998€ 1,055€ 2,11
1000 +€ 1,03€ 2,06

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Verpakkingsopties
RS-stocknr.:
687-362
Fabrikantnummer:
RD3E08BBJHRBTL
Fabrikant:
ROHM
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Merk

ROHM

Product Type

Single MOSFETs

Channel Type

Type P

Maximum Drain Source Voltage Vds

-30V

Package Type

TO-252 (TL)

Series

RD3E08BBJHRB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

5 V

Typical Gate Charge Qg @ Vgs

150nC

Maximum Power Dissipation Pd

142W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

6.8 mm

Height

2.3mm

Length

10.50mm

Standards/Approvals

AEC-Q101, RoHS

Automotive Standard

AEC-Q101

Land van herkomst:
JP
The ROHM Power MOSFET designed for demanding applications requiring low on-resistance and high current handling capabilities. This robust device operates at a maximum drain-source voltage of -30V and a continuous drain current of ±80A, ensuring efficient performance in power management systems. Its innovative construction includes a thermal resistance of just 1.05 °C/W, optimising reliability and facilitating effective heat dissipation. With AEC-Q101 qualification, this MOSFET is suitable for automotive applications, thriving in environments prone to extreme temperature variations and ensuring dependable operation under challenging conditions.

Delivers low on resistance of 3.7 mΩ, enhancing efficiency and minimising energy loss

Pulsed drain current capability of ±160A, accommodating high-demand applications

Gate-source voltage ratings of +5/-20V ensure versatile operation and robust control

Assemblable in a DPAK package for efficient thermal management and compact footprint

Avalanche tested for improved reliability in high-stress electrical environments

AEC Q101 qualified, making it ideal for safety-critical automotive applications.

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