ROHM AG086FGD3HRB Type N-Channel Single MOSFETs, 80 A, 40 V Enhancement, 3-Pin TO-252 (TL) AG086FGD3HRBTL

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€ 4,25

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€ 5,142

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Verpakkingsopties
RS-stocknr.:
687-456
Fabrikantnummer:
AG086FGD3HRBTL
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

40V

Series

AG086FGD3HRB

Package Type

TO-252 (TL)

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

28nC

Maximum Power Dissipation Pd

76W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

6.80 mm

Length

10.50mm

Height

2.3mm

Standards/Approvals

RoHS, AEC-Q101

Automotive Standard

AEC-Q101

Land van herkomst:
JP
The ROHM Power MOSFET is engineered for high-performance applications, featuring a robust construction that ensures reliability and efficiency. With a maximum drain-source voltage of 40V and capable of handling continuous currents up to 80A, this device is an optimal solution for automotive systems and other demanding environments. Its low on-resistance of just 4.1mΩ facilitates minimal power loss during operation, making it particularly beneficial for power management tasks. Fully AEC-Q101 qualified, this MOSFET meets stringent automotive standards, ensuring consistent quality for demanding applications. The product supports efficient heat dissipation, allowing for a maximum power dissipation of 76W while maintaining a wide operational temperature range.

Low on resistance of 4.1mΩ enhances energy efficiency

AEC Q101 qualification assures automotive-grade reliability

Maximum continuous drain current of 80A caters to high load applications

Pulsed drain current capability reaches 160A for transient load handling

Supports gate-source voltage of ±20V for flexible control

Avalanche rated for increased operational safety

Thermal resistance specification aids in efficient heat management

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