ROHM AG091FLD3HRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) AG091FLD3HRBTL
- RS-stocknr.:
- 687-462
- Fabrikantnummer:
- AG091FLD3HRBTL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 2 eenheden)*
€ 1,98
(excl. BTW)
€ 2,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 26 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2 - 18 | € 0,99 | € 1,98 |
| 20 - 48 | € 0,87 | € 1,74 |
| 50 - 198 | € 0,785 | € 1,57 |
| 200 - 998 | € 0,63 | € 1,26 |
| 1000 + | € 0,62 | € 1,24 |
*prijsindicatie
- RS-stocknr.:
- 687-462
- Fabrikantnummer:
- AG091FLD3HRBTL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 (TL) | |
| Series | AG091FLD3HRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 76W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.50mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Width | 6.80 mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 (TL) | ||
Series AG091FLD3HRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 76W | ||
Maximum Operating Temperature 175°C | ||
Length 10.50mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Width 6.80 mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- JP
The ROHM N channel Power MOSFET designed for automotive applications, providing exceptional efficiency and reliability. With a maximum drain-source voltage of 60V and a continuous drain current capacity of 80A, this MOSFET ensures optimal performance in demanding environments. Its low on-resistance of 7.5mΩ significantly reduces power losses, making it suitable for various automotive systems and high-current applications. The device is RoHS compliant with Pb-free plating, ensuring environmental safety while maintaining robust performance under stringent conditions.
Low on resistance for improved efficiency and reduced heat generation
AEC Q101 qualified, ensuring high reliability in automotive applications
100% avalanche tested for enhanced safety and durability
Wide operating junction temperature range from -55 to +175 °C for versatile use
Robust power dissipation capacity of 76W to handle significant loads
Tape packaging facilitates ease of handling and assembly in manufacturing environments
Embossed packaging specifications ensure secure dynamics during transport
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