ROHM RD3L04BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L04BBJHRBTL
- RS-stocknr.:
- 687-468
- Fabrikantnummer:
- RD3L04BBJHRBTL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 2 eenheden)*
€ 4,18
(excl. BTW)
€ 5,06
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2 - 18 | € 2,09 | € 4,18 |
| 20 - 48 | € 1,835 | € 3,67 |
| 50 - 198 | € 1,655 | € 3,31 |
| 200 - 998 | € 1,34 | € 2,68 |
| 1000 + | € 1,30 | € 2,60 |
*prijsindicatie
- RS-stocknr.:
- 687-468
- Fabrikantnummer:
- RD3L04BBJHRBTL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RD3L04BBJHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Power Dissipation Pd | 77W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RD3L04BBJHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Power Dissipation Pd 77W | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel power MOSFET designed for efficient switching in automotive and industrial applications. Capable of withstanding a drain-source voltage of -60V and maximum continuous drain current of ±48A, this component ensures reliable performance under demanding conditions. With a low on-resistance of 30mΩ, it optimises power loss, thereby increasing overall system efficiency. The product is also AEC-Q101 qualified and 100% avalanche tested, making it an ideal choice for critical applications where reliability is paramount.
Low on resistance promotes energy efficiency
AEC Q101 qualification ensures high reliability in automotive applications
100% avalanche testing provides assurance of performance under stress
Compatible with a wide temperature range from -55°C to 175°C for versatile usage
Avalanche energy capability of 34.9 mJ enhances robustness under dynamic conditions
Complete electrical characteristics at 25°C allow precise application in designs
Embossed packaging guarantees secure and efficient storage and handling
Optimised for various applications, including ADAS, infotainment, and lighting
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