ROHM RD3L04BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L04BBJHRBTL

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€ 5,06

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  • Verzending vanaf 26 januari 2026
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2 - 18€ 2,09€ 4,18
20 - 48€ 1,835€ 3,67
50 - 198€ 1,655€ 3,31
200 - 998€ 1,34€ 2,68
1000 +€ 1,30€ 2,60

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Verpakkingsopties
RS-stocknr.:
687-468
Fabrikantnummer:
RD3L04BBJHRBTL
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

Type P

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252 (TL)

Series

RD3L04BBJHRB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

5 V

Typical Gate Charge Qg @ Vgs

48nC

Maximum Power Dissipation Pd

77W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

2.3mm

Length

10.50mm

Width

6.8 mm

Standards/Approvals

AEC-Q101, RoHS

Automotive Standard

AEC-Q101

Land van herkomst:
JP
The ROHM P channel power MOSFET designed for efficient switching in automotive and industrial applications. Capable of withstanding a drain-source voltage of -60V and maximum continuous drain current of ±48A, this component ensures reliable performance under demanding conditions. With a low on-resistance of 30mΩ, it optimises power loss, thereby increasing overall system efficiency. The product is also AEC-Q101 qualified and 100% avalanche tested, making it an ideal choice for critical applications where reliability is paramount.

Low on resistance promotes energy efficiency

AEC Q101 qualification ensures high reliability in automotive applications

100% avalanche testing provides assurance of performance under stress

Compatible with a wide temperature range from -55°C to 175°C for versatile usage

Avalanche energy capability of 34.9 mJ enhances robustness under dynamic conditions

Complete electrical characteristics at 25°C allow precise application in designs

Embossed packaging guarantees secure and efficient storage and handling

Optimised for various applications, including ADAS, infotainment, and lighting

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