ROHM AG194FPD3HRB Type N-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 (TL) AG194FPD3HRBTL

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  • Verzending vanaf 20 januari 2026
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Verpakkingsopties
RS-stocknr.:
687-353
Fabrikantnummer:
AG194FPD3HRBTL
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252 (TL)

Series

AG194FPD3HRB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

142W

Typical Gate Charge Qg @ Vgs

55nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

6.80 mm

Height

2.3mm

Standards/Approvals

AEC-Q101, RoHS

Length

10.50mm

Automotive Standard

AEC-Q101

Land van herkomst:
JP
The ROHM N channel power MOSFET designed for applications requiring robust power management. Operating at a maximum of 100V and capable of handling continuous currents up to 80A, this component excels in delivering low on-resistance, thus minimising power loss in demanding automotive systems. Its Pb-free plating and compliance with RoHS standards ensure both environmental safety and reliability. Notably, the device is fully qualified under AEC-Q101, making it suitable for automotive applications where performance and resilience are critical. With a power dissipation capability of 142W and stringent avalanche testing, this MOSFET supports reliable operation in a variety of high-performance circuits.

Offers a low on resistance of 6.2mΩ for improved efficiency

Rated for continuous drain current of 80A, suitable for high-power applications

Features a breakdown voltage of 100V providing robustness against voltage spikes

AEC Q101 qualified, ensuring reliability in automotive environments

Avalanche tested, allowing for safe operation under transient conditions

Pb free and RoHS compliant, aligning with environmental standards

Ideal for automotive systems, enhancing power management capabilities

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