STMicroelectronics G-HEMT P-Channel Transistor, 26 A, 700 V Enhancement, 13-Pin TO-LL SGT070R70HTO

Afbeelding representeert productcategorie

Bekijk alle MOSFETs

Subtotaal (1 eenheid)*

€ 3,82

(excl. BTW)

€ 4,62

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks
Per stuk
1 +€ 3,82

*prijsindicatie

RS-stocknr.:
719-630
Fabrikantnummer:
SGT070R70HTO
Fabrikant:
STMicroelectronics
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

STMicroelectronics

Product Type

Transistor

Channel Type

P-Channel

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-LL

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

13

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-6 to 7 V

Maximum Power Dissipation Pd

231W

Typical Gate Charge Qg @ Vgs

8.5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.58mm

Width

10.4 mm

Height

2.4mm

Land van herkomst:
CN
The STMicroelectronics 700 V 26 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

Enhancement mode normally off transistor

Very high switching speed

High power management capability

Extremely low capacitances

Kelvin source pad for optimum gate driving

Zero reverse recovery charge

ESD safeguard

Gerelateerde Links