STMicroelectronics G-HEMT P-Channel Transistor, 11.5 A, 700 V Enhancement, 8-Pin PowerFLAT SGT190R70ILB

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€ 1,30

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€ 1,57

(incl. BTW)

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RS-stocknr.:
719-635
Fabrikantnummer:
SGT190R70ILB
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Product Type

Transistor

Channel Type

P-Channel

Maximum Continuous Drain Current Id

11.5A

Maximum Drain Source Voltage Vds

700V

Series

G-HEMT

Package Type

PowerFLAT

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

83W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

2.8nC

Maximum Operating Temperature

150°C

Height

0.9mm

Length

8.1mm

Land van herkomst:
CN
The STMicroelectronics 700 V 11.5 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

Enhancement mode normally off transistor

Very high switching speed

High power management capability

Extremely low capacitances

Kelvin source pad for optimum gate driving

Zero reverse recovery charge

ESD safeguard

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