STMicroelectronics G-HEMT P-Channel Transistor, 10 A, 700 V Enhancement, 8-Pin PowerFLAT SGT240R70ILB
- RS-stocknr.:
- 719-636
- Fabrikantnummer:
- SGT240R70ILB
- Fabrikant:
- STMicroelectronics
Subtotaal (1 eenheid)*
€ 1,06
(excl. BTW)
€ 1,28
(incl. BTW)
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- Verzending vanaf 20 maart 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 1,06 |
*prijsindicatie
- RS-stocknr.:
- 719-636
- Fabrikantnummer:
- SGT240R70ILB
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Transistor | |
| Channel Type | P-Channel | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | G-HEMT | |
| Package Type | PowerFLAT | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2nC | |
| Maximum Power Dissipation Pd | 76W | |
| Maximum Gate Source Voltage Vgs | -6 to 7 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 8.1 mm | |
| Length | 8.1mm | |
| Height | 0.9mm | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Transistor | ||
Channel Type P-Channel | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series G-HEMT | ||
Package Type PowerFLAT | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2nC | ||
Maximum Power Dissipation Pd 76W | ||
Maximum Gate Source Voltage Vgs -6 to 7 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 8.1 mm | ||
Length 8.1mm | ||
Height 0.9mm | ||
- Land van herkomst:
- CN
The STMicroelectronics 700 V 10 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Enhancement mode normally off transistor
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
ESD safeguard