STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB

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€ 2,32

(excl. BTW)

€ 2,81

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RS-stocknr.:
719-632
Fabrikantnummer:
SGT080R70ILB
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Product Type

Transistor

Channel Type

P-Channel

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

700V

Package Type

PowerFLAT

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.2nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

188W

Maximum Gate Source Voltage Vgs

-6 to 7 V

Maximum Operating Temperature

150°C

Length

8.1mm

Width

8.1 mm

Height

0.9mm

Land van herkomst:
CN
The STMicroelectronics 700 V 29 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

Enhancement mode normally off transistor

Very high switching speed

High power management capability

Extremely low capacitances

Kelvin source pad for optimum gate driving

Zero reverse recovery charge

ESD safeguard

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