STMicroelectronics G-HEMT P-Channel Transistor, 17 A, 700 V Enhancement, 8-Pin PowerFLAT SGT140R70ILB
- RS-stocknr.:
- 719-634
- Fabrikantnummer:
- SGT140R70ILB
- Fabrikant:
- STMicroelectronics
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| 100 - 499 | € 2,39 | € 203,00 |
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| 1000 + | € 2,23 | € 2.190,00 |
*prijsindicatie
- RS-stocknr.:
- 719-634
- Fabrikantnummer:
- SGT140R70ILB
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Transistor | |
| Channel Type | P-Channel | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | PowerFLAT | |
| Series | G-HEMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Power Dissipation Pd | 113W | |
| Maximum Gate Source Voltage Vgs | -6V, 7V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Height | 900μm | |
| Width | 8.1mm | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Transistor | ||
Channel Type P-Channel | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type PowerFLAT | ||
Series G-HEMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Power Dissipation Pd 113W | ||
Maximum Gate Source Voltage Vgs -6V, 7V | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Height 900μm | ||
Width 8.1mm | ||
- Land van herkomst:
- CN
The STMicroelectronics 700 V 17 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Enhancement mode normally off transistor
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
ESD safeguard
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