Vishay SiD N channel-Channel MOSFET, 291 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SiDR402EP

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€ 2,70

(excl. BTW)

€ 3,27

(incl. BTW)

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RS-stocknr.:
735-145
Fabrikantnummer:
SiDR402EP
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

291A

Maximum Drain Source Voltage Vds

40V

Series

SiD

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00088Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

110nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150W

Forward Voltage Vf

40V

Maximum Gate Source Voltage Vgs

10V

Maximum Operating Temperature

175°C

Width

6mm

Standards/Approvals

RoHS

Length

7mm

Height

2mm

Automotive Standard

No

Land van herkomst:
DE
The Vishay N-Channel MOSFET rated for 40V drain-source voltage, engineered for high-efficiency synchronous rectification in AI power server DC/DC converters. It provides ultra-low on-resistance around 0.88mΩ at 10V gate drive to minimize conduction losses in high-current power stages.

65A continuous drain current at TA=25°C

Low RDS(on) x Qg figure-of-merit for optimal switching

Material categorization qualification for reliability

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