Vishay TrenchFET N-Channel MOSFET, 9 A, 60 V Enhancement, 6-Pin PowerPAK SIA4620DJ-T1-GE3
- RS-stocknr.:
- 904-973
- Fabrikantnummer:
- SIA4620DJ-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
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- Verzending vanaf 11 februari 2027
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Rol(len) | Per rol |
|---|---|
| 1 - 24 | € 0,37 |
| 25 - 99 | € 0,24 |
| 100 + | € 0,14 |
*prijsindicatie
- RS-stocknr.:
- 904-973
- Fabrikantnummer:
- SIA4620DJ-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.023Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.4nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 17.9W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.05mm | |
| Standards/Approvals | ROHS | |
| Length | 2.05mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.023Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.4nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 17.9W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 2.05mm | ||
Standards/Approvals ROHS | ||
Length 2.05mm | ||
Automotive Standard No | ||
- Land van herkomst:
- IL
The Vishay N-Channel MOSFET designed for efficient power management. It excels in various applications due to its high performance metrics and Compact packaging, making it Ideal for modern electronic designs.
Operates at a maximum drain-source voltage of 60 V
Features low on-state resistance for enhanced efficiency
Offers a continuous drain current up to 8.6 A at 25 °C
Includes extensive testing for reliability and performance
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