Vishay SUM70040E Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263 SUM70040E-GE3
- RS-stocknr.:
- 124-2248
- Fabrikantnummer:
- SUM70040E-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 10,14
(excl. BTW)
€ 12,27
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 370 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,028 | € 10,14 |
| 50 - 120 | € 1,50 | € 7,50 |
| 125 - 245 | € 1,362 | € 6,81 |
| 250 - 495 | € 1,216 | € 6,08 |
| 500 + | € 1,116 | € 5,58 |
*prijsindicatie
- RS-stocknr.:
- 124-2248
- Fabrikantnummer:
- SUM70040E-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | SUM70040E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.41 mm | |
| Standards/Approvals | No | |
| Height | 4.82mm | |
| Length | 9.65mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series SUM70040E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Width 10.41 mm | ||
Standards/Approvals No | ||
Height 4.82mm | ||
Length 9.65mm | ||
Automotive Standard No | ||
- Land van herkomst:
- TW
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Gerelateerde Links
- Vishay N-Channel 100-V N-Channel MOSFET 100 V, 3-Pin D2PAK SUM70042E-GE3
- Vishay N-Channel MOSFET 650 V D2PAK SIHB055N60EF-GE3
- Vishay N-Channel MOSFET 650 V D2PAK SIHB24N65E-GE3
- Vishay N-Channel MOSFET 600 V D2PAK SIHB15N60E-GE3
- Vishay N-Channel MOSFET 100 V, 3-Pin D2PAK SIHF530STRR-GE3
- Vishay Silicon N-Channel MOSFET 100 V, 7-Pin D2PAK SUM70042M-GE3
- Vishay N-Channel MOSFET 600 V, 3-Pin D2PAK SIHB22N60EF-GE3
- Vishay N-Channel MOSFET 200 V, 3-Pin D2PAK SIHF630STRL-GE3
