Vishay EF Type N-Channel Power MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3
- RS-stocknr.:
- 204-7246
- Fabrikantnummer:
- SIHB125N60EF-GE3
- Fabrikant:
- Vishay
Subtotaal (1 verpakking van 5 eenheden)*
€ 23,88
(excl. BTW)
€ 28,895
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
- Verzending vanaf 02 december 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 4,776 | € 23,88 |
*prijsindicatie
- RS-stocknr.:
- 204-7246
- Fabrikantnummer:
- SIHB125N60EF-GE3
- Fabrikant:
- Vishay
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | EF | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.06mm | |
| Length | 14.61mm | |
| Width | 9.65mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series EF | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 4.06mm | ||
Length 14.61mm | ||
Width 9.65mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 25A Continuous Drain Current - SIHB125N60EF-GE3
Features and Benefits:
Applications
What gate voltage range is safe for switching the device?
How does package choice affect thermal performance?
What are the environmental limits for operation?
How many pins are available for PCB layout considerations?
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