Vishay Siliconix TrenchFET N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 SiSS02DN-T1-GE3

Bekijk alle MOSFETs
Informatie over voorraden is momenteel niet toegankelijk
RS-stocknr.:
178-3698
Fabrikantnummer:
SiSS02DN-T1-GE3
Fabrikant:
Vishay Siliconix
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Package Type

1212

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Number of Elements per Chip

1

Width

3.15mm

Length

3.15mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

N.v.t.

Land van herkomst:
CN
FEATURES
TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally
enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces
switching related power loss
APPLICATIONS
Synchronous rectification
Synchronous buck converter
High power density DC/DC
OR-ing
Load switching

Gerelateerde Links