Vishay TrenchFET Type P-Channel MOSFET, 16 A, 12 V Enhancement, 6-Pin MICRO FOOT
- RS-stocknr.:
- 180-7326
- Fabrikantnummer:
- SI8483DB-T2-E1
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 687,00
(excl. BTW)
€ 831,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 21 mei 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,229 | € 687,00 |
*prijsindicatie
- RS-stocknr.:
- 180-7326
- Fabrikantnummer:
- SI8483DB-T2-E1
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | MICRO FOOT | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Power Dissipation Pd | 13W | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.5mm | |
| Standards/Approvals | No | |
| Height | 0.59mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type MICRO FOOT | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Power Dissipation Pd 13W | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 1.5mm | ||
Standards/Approvals No | ||
Height 0.59mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay Siliconix Si8483DB series TrenchFET dual N channel power MOSFET has drain to source voltage of 12 V. It is maximum power dissipation of 13 W and mainly used in load switch in portable devices.
Low voltage drop
Low power consumption
Increased battery life
Gerelateerde Links
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin MICRO FOOT SI8483DB-T2-E1
- Vishay TrenchFET Type N-Channel MOSFET 8 V Enhancement, 4-Pin MICRO FOOT
- Vishay TrenchFET Type N-Channel MOSFET 8 V Enhancement, 4-Pin MICRO FOOT SI8802DB-T2-E1
- Vishay Si8489EDB Type P-Channel MOSFET 20 V Enhancement, 4-Pin MICRO FOOT
- Vishay Si8489EDB Type P-Channel MOSFET 20 V Enhancement, 4-Pin MICRO FOOT SI8489EDB-T2-E1
- Vishay TrenchFET N channel-Channel MOSFET 20 V Enhancement, 4-Pin MICRO FOOT SI8916EDB-T6-E1
- Vishay Type N-Channel MOSFET 20 V, 4-Pin MICRO FOOT
- Vishay Type N-Channel MOSFET 8 V, 6-Pin MICRO FOOT