Vishay EF Type N-Channel Power MOSFET, 16 A, 600 V Enhancement, 3-Pin TO-220 SIHF068N60EF-GE3

RS-stocknr.:: 204-7248
Fabrikantnummer:: SIHF068N60EF-GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 16 A, 600 V Enhancement, 3-Pin TO-220 SIHF068N60EF-GE3

Subtotaal (1 rol van 1000 eenheden)*

€ 2.676,00

(excl. BTW)

€ 3.238,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 04 maart 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
1000 +	€ 2,676	€ 2.676,00

*prijsindicatie

RS-stocknr.:: 204-7248
Fabrikantnummer:: SIHF068N60EF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	16A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	EF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	68mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	39W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	4.6mm
	Standards/Approvals	RoHS
	Length	28.6mm
	Width	10mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 16A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series EF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 68mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 39W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 4.6mm
	Standards/Approvals RoHS
	Length 28.6mm
	Width 10mm
	Automotive Standard No

Vishay Series EF Power MOSFET, 600V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SIHF068N60EF-GE3

This power MOSFET is a high-voltage N-channel switching device designed for use in power conversion and control circuits where robust voltage handling and through-hole mounting are required. It operates across a broad temperature range and is suited to applications demanding sustained drain current and controlled gate-drive characteristics, presented in a TO-220 through-hole package for conventional board assembly.

Features and Benefits:

• 600V drain voltage for high-voltage switching applications
• 16A continuous drain current for sustained load handling
• 68mΩ Rds(on) to reduce conduction losses
• 51nC typical gate charge for predictable switching control
• 39W maximum power dissipation for thermal planning
• ±30V gate tolerance to accommodate varied gate-drive amplitudes

Applications

• Suitable for industrial power converters and inverters
• Ideal for high-voltage motor drive stages
• Used for power supplies requiring through-hole mounting
• Can be used for switching elements in lighting controllers
• Suitable for test rigs and repair of legacy hardware

What temperature extremes can it tolerate during operation?

It is specified to function from -55°C up to 150°C, allowing use in environments with wide thermal variation.

How does the package aid thermal management on a populated board?

The TO-220 through-hole format permits attachment of a heatsink to its exposed tab, enabling improved dissipation up to its 39W rating when appropriately mounted.

What gate-drive considerations are necessary for switching performance?

Design should account for the 51nC gate charge when sizing drivers to achieve desired rise/fall times and switching losses at target frequencies.

What type of channel and conduction mode does it use?

It is an N-channel device operating in enhancement mode, requiring a positive gate-source drive to conduct.