Vishay EF Type N-Channel Power MOSFET, 16 A, 600 V Enhancement, 3-Pin TO-220

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€ 2.676,00

(excl. BTW)

€ 3.238,00

(incl. BTW)

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  • Verzending vanaf 03 december 2026
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RS-stocknr.:
204-7248
Fabrikantnummer:
SIHF068N60EF-GE3
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

600V

Series

EF

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

68mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

39W

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

10mm

Standards/Approvals

RoHS

Length

28.6mm

Height

4.6mm

Automotive Standard

No

Vishay Series EF Power MOSFET, 600V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SIHF068N60EF-GE3


This power MOSFET is a high-voltage N-channel enhancement device intended for power switching and control in industrial and electronic systems. It is optimised for through-hole mounting in TO-220 packages and suits applications requiring robust voltage handling and gate-drive flexibility. The device operates across a wide temperature range and is suitable for designs where conventional surface-mount parts are impractical.

Features and Benefits:


• 600V drain-source rating enables high-voltage switching capability • 68mΩ Rds(on) minimises conduction losses during load operation • 16A continuous drain current supports moderate power loads • 51nC typical gate charge allows predictable switching performance • 39W maximum power dissipation manages thermal loading in circuits • 30V gate tolerance permits compatibility with standard gate drivers

Applications


• Suitable for mains-side switching in industrial converters • Ideal for high-voltage motor drive front-ends • Used for switch-mode power supplies handling elevated voltages • Can be used for power-factor correction stages in larger systems • Used with discrete power assemblies requiring through-hole mounting

What temperature extremes can the device withstand during operation?


It is specified to operate down to -55°C and up to 150°C, accommodating cold-start conditions and high-temperature environments.

How should thermal management be approached for sustained operation?


With a 39W maximum dissipation, a heatsink or chassis mounting is recommended to maintain junction temperature within safe limits during continuous loads.

What gate-drive considerations are necessary for reliable switching?


The gate must be driven within ±30V

the typical gate charge of 51nC helps estimate required driver current and switching losses.

Does the packaging affect board assembly choices?


The through-hole TO-220 format facilitates manual or wave solder assembly and provides a robust mechanical connection for high-power layouts.

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