Vishay EF Type N-Channel Power MOSFET, 16 A, 600 V Enhancement, 3-Pin TO-220 SIHF068N60EF-GE3

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Verpakkingsopties
RS-stocknr.:
204-7249
Fabrikantnummer:
SIHF068N60EF-GE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

600V

Series

EF

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

68mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

39W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

28.6mm

Width

10mm

Height

4.6mm

Automotive Standard

No

Vishay Series EF Power MOSFET, 600V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SIHF068N60EF-GE3


This power MOSFET is a high-voltage N-channel switching device designed for use in power conversion and control circuits where robust voltage handling and through-hole mounting are required. It operates across a broad temperature range and is suited to applications demanding sustained drain current and controlled gate-drive characteristics, presented in a TO-220 through-hole package for conventional board assembly.

Features and Benefits:


• 600V drain voltage for high-voltage switching applications
• 16A continuous drain current for sustained load handling
• 68mΩ Rds(on) to reduce conduction losses
• 51nC typical gate charge for predictable switching control
• 39W maximum power dissipation for thermal planning
• ±30V gate tolerance to accommodate varied gate-drive amplitudes

Applications


• Suitable for industrial power converters and inverters
• Ideal for high-voltage motor drive stages
• Used for power supplies requiring through-hole mounting
• Can be used for switching elements in lighting controllers
• Suitable for test rigs and repair of legacy hardware

What temperature extremes can it tolerate during operation?


It is specified to function from -55°C up to 150°C, allowing use in environments with wide thermal variation.

How does the package aid thermal management on a populated board?


The TO-220 through-hole format permits attachment of a heatsink to its exposed tab, enabling improved dissipation up to its 39W rating when appropriately mounted.

What gate-drive considerations are necessary for switching performance?


Design should account for the 51nC gate charge when sizing drivers to achieve desired rise/fall times and switching losses at target frequencies.

What type of channel and conduction mode does it use?


It is an N-channel device operating in enhancement mode, requiring a positive gate-source drive to conduct.

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