Vishay EF Type N-Channel Power MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3

RS-stocknr.:: 210-4962
Fabrikantnummer:: SiHA186N60EF-GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3

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€ 117,00

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€ 141,50

(incl. BTW)

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 2,34	€ 117,00
100 - 200	€ 2,20	€ 110,00
250 - 450	€ 1,989	€ 99,45
500 +	€ 1,872	€ 93,60

*prijsindicatie

RS-stocknr.:: 210-4962
Fabrikantnummer:: SiHA186N60EF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8.4A
	Maximum Drain Source Voltage Vds	600V
	Series	EF
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	168mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	21nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	33W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	4.3mm
	Length	28.1mm
	Width	9.7mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8.4A
	Maximum Drain Source Voltage Vds 600V
	Series EF
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 168mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 21nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 33W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 4.3mm
	Length 28.1mm
	Width 9.7mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SiHA186N60EF-GE3

Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 8.4A Maximum Continuous Drain Current - SiHA186N60EF-GE3

This power MOSFET is a high-voltage N-channel switching device designed for industrial power control and conversion. It functions as an enhancement-mode transistor for use in through-hole assemblies and is suited to applications requiring sustained operation across a wide temperature range.

Features and Benefits:

• 600V drain rating enables high-voltage switching applications • 8.4 A continuous drain current supports moderate load currents • 168 mΩ Rds(on) reduces conduction losses under load • 21 nC typical gate charge minimises drive energy requirements • 33W power dissipation allows steady-state thermal handling • 150 °C maximum operating temperature endures harsh thermal conditions

Applications

• Suitable for high-voltage switch-mode power supplies • Ideal for industrial motor drive gate stages • Used for mains-frequency inverter output stages • Can be used for power factor correction circuitry • Used with discrete power assemblies requiring through-hole mounting

What gate voltage range is safe for switching control?

The device accepts up to 30V between gate and source, so driver stages should be limited within this range to avoid gate overstress.

How does the package choice affect mounting and heat management?

The TO-220 through-hole package facilitates bolt‑down heatsinking and straightforward PCB mounting for effective thermal coupling.

What extremes of ambient temperature can it withstand?

It operates from -55 °C up to 150 °C, allowing use in environments with wide thermal excursions.

What should be considered when designing for continuous current?

Account for 8.4 A continuous drain current and 33W dissipation by specifying adequate heatsinking and a thermal path to maintain safe junction temperatures.

How does gate charge influence driver selection?

A typical gate charge of 21 nC helps determine driver current and switching speed requirements to achieve desired rise and fall times.