Vishay SiR180ADP Type N-Channel MOSFET, 137 A, 60 V Enhancement, 8-Pin SO-8

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RS-stocknr.:
210-5000
Fabrikantnummer:
SiR180ADP-T1-RE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

137A

Maximum Drain Source Voltage Vds

60V

Series

SiR180ADP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

46.2nC

Maximum Power Dissipation Pd

83.3W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.12mm

Width

5.26 mm

Length

6.25mm

Automotive Standard

No

The Vishay N-Channel 60 V (D-S) MOSFET has PowerPAK SO-8 package type.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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