Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-263

RS-stocknr.:: 214-4367
Fabrikantnummer:: IPB60R120P7ATMA1
Fabrikant:: Infineon

Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-263

Subtotaal (1 rol van 1000 eenheden)*

€ 1.490,00

(excl. BTW)

€ 1.800,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 29 oktober 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
1000 +	€ 1,49	€ 1.490,00

*prijsindicatie

RS-stocknr.:: 214-4367
Fabrikantnummer:: IPB60R120P7ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	600V CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	120mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	36nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	95W
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Width	9.27mm
	Standards/Approvals	No
	Height	4.5mm
	Length	10.02mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series 600V CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 120mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 36nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 95W
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Width 9.27mm
	Standards/Approvals No
	Height 4.5mm
	Length 10.02mm
	Automotive Standard No

Datasheet - IPB60R120P7ATMA1

Infineon 600V CoolMOS P7 Series MOSFET, 600V Drain Source Voltage, 26A Continuous Drain Current - IPB60R120P7ATMA1

This MOSFET is a high-voltage N-channel enhancement device designed for switching and power-conversion tasks in demanding thermal environments. It operates across an extended temperature range and is intended for surface-mount assembly in power electronic circuits where high-voltage blocking and significant continuous current capability are required.

Features and Benefits:

• 600V drain voltage enables high-voltage system designs
• 26A continuous current supports robust load handling
• 120mΩ Rds(on) reduces conduction losses during operation
• 36nC typical gate charge allows predictable drive sizing
• 95W maximum power dissipation permits elevated power throughput
• 0.9V forward voltage limits diode drop in synchronous circuits

Applications

• Suitable for offline switch-mode power supplies
• Ideal for resonant and hard-switching converters
• Used with high-voltage motor-drive front ends
• Can be used for auxiliary power rails in industrial equipment
• Appropriate for high-temperature electronics cabinets

What package type does it use for board mounting?

It is supplied in a TO-263 package configured for surface mounting, facilitating thermal conduction to a PCB land pattern.

How does the device tolerate extreme temperatures in operation?

It is specified to function from -55°C up to 150°C, allowing use in environments with wide thermal swings.

What gate drive limitations should I observe?

The maximum gate-to-source voltage rating is 20V, so drive circuits must remain within this threshold to avoid gate damage.

What switching behaviour impacts layout decisions?

The device’s typical gate charge of 36nC and its Rds(on) value influence gate-driver current needs and copper width for minimising I2R losses.