Vishay TrenchFET N-Channel MOSFET, 81.2 A, 40 V Enhancement, 4-Pin SO-8 SIJA74DP-T1-GE3
- RS-stocknr.:
- 228-2891
- Fabrikantnummer:
- SIJA74DP-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (3000 eenheden, op een rol van 3000)*
€ 759,00
(excl. BTW)
€ 918,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 6.000 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,253 | € 759,00 |
*prijsindicatie
- RS-stocknr.:
- 228-2891
- Fabrikantnummer:
- SIJA74DP-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 81.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 3.99mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 46.2W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 81.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 3.99mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 46.2W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 40 V MOSFET.
100 % Rg and UIS tested
Gerelateerde Links
- Vishay TrenchFET N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SIJA74DP-T1-GE3
- Vishay SiRA74DP N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SiRA74DP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIRA00DP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIRA06DP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIRA88DP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 25 V Enhancement, 8-Pin SO-8 SIRA20BDP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 45 V Enhancement, 4-Pin SO-8 SiJ450DP-T1-GE3