Vishay SIHH Type N-Channel MOSFET, 19 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3
- RS-stocknr.:
- 279-9914
- Fabrikantnummer:
- SIHH150N60E-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 5,70
(excl. BTW)
€ 6,90
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 49 | € 5,70 |
| 50 - 99 | € 5,59 |
| 100 - 249 | € 5,47 |
| 250 - 999 | € 5,35 |
| 1000 + | € 5,26 |
*prijsindicatie
- RS-stocknr.:
- 279-9914
- Fabrikantnummer:
- SIHH150N60E-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIHH | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIHH | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a E series power MOSFET and the transistor in it is made up of material known as silicon.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance
Avalanche energy rated
Reduced switching and conduction losses
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