Vishay Isolated N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC SI9945BDY-T1-GE3
- RS-stocknr.:
- 919-4189
- Fabrikantnummer:
- SI9945BDY-T1-GE3
- Fabrikant:
- Vishay
Niet beschikbaar
RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 919-4189
- Fabrikantnummer:
- SI9945BDY-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Transistor Configuration | Isolated | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 5.3 A | |
| Maximum Drain Source Voltage (Vds) | 60 V | |
| Channel Mode | Enhancement | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Height | 1.5 mm | |
| Length | 5 mm | |
| Maximum Drain Source Resistance (Rds) | 72 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V, -20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 3.1 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Width | 4 mm | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Transistor Configuration Isolated | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 5.3 A | ||
Maximum Drain Source Voltage (Vds) 60 V | ||
Channel Mode Enhancement | ||
Pin Count 8 | ||
Package Type SOIC | ||
Height 1.5 mm | ||
Length 5 mm | ||
Maximum Drain Source Resistance (Rds) 72 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V, -20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 3.1 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Width 4 mm | ||
- Land van herkomst:
- TW
Dual N-Channel MOSFET, Vishay Semiconductor
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