Vishay EF Type N-Channel MOSFET, 70 A, 600 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 178-0891
- Fabrikantnummer:
- SIHG70N60EF-GE3
- Fabrikant:
- Vishay
Subtotaal (1 tube van 50 eenheden)*
€ 453,75
(excl. BTW)
€ 549,05
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 13 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 + | € 9,075 | € 453,75 |
*prijsindicatie
- RS-stocknr.:
- 178-0891
- Fabrikantnummer:
- SIHG70N60EF-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | EF | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 38mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 520W | |
| Typical Gate Charge Qg @ Vgs | 253nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Width | 5.31 mm | |
| Height | 20.82mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series EF | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 38mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 520W | ||
Typical Gate Charge Qg @ Vgs 253nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Width 5.31 mm | ||
Height 20.82mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)
MOSFET Transistors, Vishay Semiconductor
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