Vishay SiHD2N80AE Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252
- RS-stocknr.:
- 188-4874
- Fabrikantnummer:
- SIHD2N80AE-GE3
- Fabrikant:
- Vishay
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- RS-stocknr.:
- 188-4874
- Fabrikantnummer:
- SIHD2N80AE-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | SiHD2N80AE | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.9Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.25mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series SiHD2N80AE | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.9Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 150°C | ||
Height 2.25mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
E Series Power MOSFET.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
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