Fabrikantnummer

Vishay TrenchFET Type N-Channel MOSFET, 201 A, 25 V Enhancement, 4-Pin SO-8 SiJA22DP-T1-GE3

RS-stocknr.:: 228-2890
Fabrikantnummer:: SiJA22DP-T1-GE3
Fabrikant:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 201 A, 25 V Enhancement, 4-Pin SO-8 SiJA22DP-T1-GE3

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RS-stocknr.:: 228-2890
Fabrikantnummer:: SiJA22DP-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	201A
	Maximum Drain Source Voltage Vds	25V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.74mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	83nC
	Maximum Power Dissipation Pd	48W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 201A
	Maximum Drain Source Voltage Vds 25V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.74mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 83nC
	Maximum Power Dissipation Pd 48W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SiJA22DP-T1-GE3

The Vishay TrenchFET N-channel is 25 V MOSFET.

100 % Rg and UIS tested

Vishay TrenchFET Type N-Channel MOSFET, 201 A, 25 V Enhancement, 4-Pin SO-8 SiJA22DP-T1-GE3

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