Infineon OptiMOS N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK IPD30N06S223ATMA1
- RS-stocknr.:
- 857-4584
- Fabrikantnummer:
- IPD30N06S223ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 rol van 2500 eenheden)*
€ 997,50
(excl. BTW)
€ 1.207,50
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 - 2500 | € 0,399 | € 997,50 |
| 5000 - 10000 | € 0,384 | € 960,00 |
| 12500 + | € 0,379 | € 947,50 |
*prijsindicatie
- RS-stocknr.:
- 857-4584
- Fabrikantnummer:
- IPD30N06S223ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | OptiMOS | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 23 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 100 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 55 V | ||
Series OptiMOS | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 23 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 25 nC @ 10 V | ||
Transistor Material Si | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
N.v.t.
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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