Infineon OptiMOS T N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK IPD90N04S304ATMA1

RS-stocknr.:: 753-3030
Fabrikantnummer:: IPD90N04S304ATMA1
Fabrikant:: Infineon

Infineon OptiMOS T N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK IPD90N04S304ATMA1

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 2 eenheden)*

€ 3,47

(excl. BTW)

€ 4,198

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk

Aantal stuks	Per stuk	Per verpakking*
2 - 18	€ 1,735	€ 3,47
20 +	€ 1,50	€ 3,00

*prijsindicatie

RS-stocknr.:: 753-3030
Fabrikantnummer:: IPD90N04S304ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	90 A
	Maximum Drain Source Voltage	40 V
	Package Type	DPAK (TO-252)
	Series	OptiMOS T
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	3.6 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	136 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	60 nC @ 10 V
	Length	6.5mm
	Width	6.22mm
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Height	2.3mm
	Minimum Operating Temperature	-55 °C

	Alles selecteren
	Merk Infineon
	Channel Type N
	Maximum Continuous Drain Current 90 A
	Maximum Drain Source Voltage 40 V
	Package Type DPAK (TO-252)
	Series OptiMOS T
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 3.6 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 136 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 60 nC @ 10 V
	Length 6.5mm
	Width 6.22mm
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Height 2.3mm
	Minimum Operating Temperature -55 °C

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS T N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK IPD90N04S304ATMA1

Infineon OptiMOS™T Power MOSFETs

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