ROHM RD3G08DBKHRB Type N-Channel Single MOSFETs, 40 V Enhancement, 3-Pin TO-252 (TL) RD3G08DBKHRBTL

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  • Verzending vanaf 20 januari 2026
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Verpakkingsopties
RS-stocknr.:
687-464
Fabrikantnummer:
RD3G08DBKHRBTL
Fabrikant:
ROHM
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Merk

ROHM

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252 (TL)

Series

RD3G08DBKHRB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

76W

Typical Gate Charge Qg @ Vgs

28nC

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101, RoHS

Width

6.8 mm

Length

10.50mm

Height

2.3mm

Automotive Standard

AEC-Q101

Land van herkomst:
JP
The ROHM Power MOSFET is engineered for high-performance applications demanding superior efficiency and high current capacity. Designed to operate at 40V with a maximum continuous drain current of 80A, this MOSFET delivers exceptional reliability and performance under various operating conditions. Furthermore, its low on-resistance of 4.1mΩ minimises energy losses, ensuring optimal thermal performance and power dissipation up to 76W, making it an ideal choice for demanding applications in automotive and industrial sectors.

Low on resistance for reduced energy losses during operation

High continuous drain current capability of 80A for robust performance

Power dissipation rating of 76W for reliable operation in high-power applications

Avalanche current rating of 30A, ensuring durability during transient conditions

AEC Q101 qualification for reliability in automotive applications

RoHS compliant with Pb free plating, aligning with environmental standards

Includes packaging specifications like embossed tape for efficient handling

Multiple voltage ratings to cater to diverse circuit designs

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