ROHM AG185FGD3HRB Type N-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG185FGD3HRBTL
- RS-stocknr.:
- 687-438
- Fabrikantnummer:
- AG185FGD3HRBTL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 2 eenheden)*
€ 2,48
(excl. BTW)
€ 3,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 20 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2 - 18 | € 1,24 | € 2,48 |
| 20 - 48 | € 1,09 | € 2,18 |
| 50 - 198 | € 0,985 | € 1,97 |
| 200 - 998 | € 0,79 | € 1,58 |
| 1000 + | € 0,775 | € 1,55 |
*prijsindicatie
- RS-stocknr.:
- 687-438
- Fabrikantnummer:
- AG185FGD3HRBTL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 (TL) | |
| Series | AG185FGD3HRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 96W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Length | 10.50mm | |
| Width | 6.80 mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 (TL) | ||
Series AG185FGD3HRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 96W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Length 10.50mm | ||
Width 6.80 mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- JP
The ROHM N channel power MOSFET designed for automotive applications. This device is tailored to provide efficient switching with a maximum drain-source voltage of 40V and a continuous drain current of 80A. It features a low on-resistance, ensuring minimal power loss during operation, which contributes to improved thermal management and performance in demanding environments. With a power dissipation capability of 96W, this MOSFET is suitable for various applications that require reliable and robust performance. Its Pb-free plating and RoHS compliance highlight 's commitment to environmentally friendly manufacturing. This part is AEC-Q101 qualified, ensuring it meets the stringent automotive standards for reliability and safety.
Low on resistance of 3.2mΩ maximises efficiency and reduces heat generation
Rated for a continuous drain current of 80A, suitable for robust applications
Provides a high power dissipation capability of 96W for demanding tasks
Designed for a maximum drain-source voltage of 40V ensuring versatility in applications
AEC Q101 qualified, ensuring high reliability in automotive use
Pb free plating and RoHS compliance reflect environmentally conscious production
Suitable for various automotive systems, enhancing system performance and longevity
Features a compact DPAK package for efficient space utilisation on PCB designs
Gerelateerde Links
- ROHM RD3 N-Channel MOSFET 40 V, 3-Pin DPAK RD3G08CBKHRBTL
- ROHM RD3G08DBKHRB N-Channel MOSFET 40 V, 3-Pin DPAK RD3G08DBKHRBTL
- ROHM AG086FGD3HRB N-Channel MOSFET 40 V, 3-Pin DPAK AG086FGD3HRBTL
- ROHM RD3G08CBLHRB N-Channel MOSFET 40 V Depletion, 3-Pin DPAK RD3G08CBLHRBTL
- ROHM N-Channel MOSFET 40 V DPAK RD3G03BBGTL1
- ROHM AG087FGD3HRB N-Channel MOSFET 40 V, 3-Pin DPAK AG087FGD3HRBTL
- ROHM AG501EGD3HRB P-Channel MOSFET 40 V, 3-Pin DPAK AG501EGD3HRBTL
- ROHM RD3 P-Channel MOSFET 40 V, 3-Pin DPAK RD3G08BBJHRBTL
