Vishay SiR626ADP Type N-Channel MOSFET, 165 A, 60 V Enhancement, 8-Pin SO-8
- RS-stocknr.:
- 204-7199
- Fabrikantnummer:
- SiR626ADP-T1-RE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 2.775,00
(excl. BTW)
€ 3.357,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 05 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,925 | € 2.775,00 |
*prijsindicatie
- RS-stocknr.:
- 204-7199
- Fabrikantnummer:
- SiR626ADP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 165A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | SiR626ADP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.75mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 83nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.12 mm | |
| Length | 5.26mm | |
| Height | 6.25mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 165A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series SiR626ADP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.75mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 83nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.12 mm | ||
Length 5.26mm | ||
Height 6.25mm | ||
Automotive Standard No | ||
The Vishay N-Channel 60 V (D-S) MOSFET is tuned for the lowest RDS - Qoss FOM.
Package Power PAK SO-8
TrenchFET Gen IV power MOSFET
Gerelateerde Links
- Vishay SiR626ADP N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SiR626ADP-T1-RE3
- Vishay Siliconix TrenchFET N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SiR188DP-T1-RE3
- Vishay N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SIR188LDP-T1-RE3
- Vishay N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SiR180ADP-T1-RE3
- Vishay N-Channel MOSFET 30 V, 8-Pin PowerPAK SO-8 SIR158DP-T1-RE3
- Vishay N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SiR4602LDP-T1-RE3
- Vishay N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SIR182LDP-T1-RE3
- Vishay N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8DC SiDR626LEP-T1-RE3
